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M54HC125
RAD-HARD QUAD BUS BUFFER (3-STATE)
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HIGH SPEED: tPD = 8ns (TYP.) at VCC = 6V LOW POWER DISSIPATION: ICC = 4A(MAX.) at TA=25C HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 6mA (MIN) BALANCED PROPAGATION DELAYS: tPLH tPHL WIDE OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 6V PIN AND FUNCTION COMPATIBLE WITH 54 SERIES 125 SPACE GRADE-1: ESA SCC QUALIFIED 50 krad QUALIFIED, 100 krad AVAILABLE ON REQUEST NO SEL UNDER HIGH LET HEAVY IONS IRRADIATION DEVICE FULLY COMPLIANT WITH SCC-9401-039
DILC-14
FPC-14
ORDER CODES
PACKAGE DILC FPC FM M54HC125D M54HC125K EM M54HC125D1 M54HC125K1
The device requires the 3-STATE control input G to be set high to place the output into the high impedance state. All inputs are equipped with protection circuits against static discharge and transient excess voltage.
DESCRIPTION The M54HC125 is an high speed CMOS QUAD BUFFER (3-STATE) fabricated with silicon gate C2MOS technology.
PIN CONNECTION
March 2004
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M54HC125
IEC LOGIC SYMBOLS
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN N 1, 4, 10, 13 2, 5, 9, 12 3, 6, 8, 11 7 14 SYMBOL 1G TO 4G 1A TO 4A 1Y TO 4Y GND VCC NAME AND FUNCTION Output Enable Input Data Inputs Data Outputs Ground (0V) Positive Supply Voltage
TRUTH TABLE
A X L H G H L L Y Z L H
ABSOLUTE MAXIMUM RATINGS
Symbol VCC VI VO IIK IOK IO Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current DC Output Current Parameter Value -0.5 to +7 -0.5 to VCC + 0.5 -0.5 to VCC + 0.5 20 20 35 70 420 -65 to +150 265 Unit V V V mA mA mA mA mW C C
ICC or IGND DC VCC or Ground Current PD Power Dissipation Tstg TL Storage Temperature Lead Temperature (10 sec)
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied
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M54HC125
RECOMMENDED OPERATING CONDITIONS
Symbol VCC VI VO Top tr, tf Supply Voltage Input Voltage Output Voltage Operating Temperature Input Rise and Fall Time VCC = 2.0V VCC = 4.5V VCC = 6.0V Parameter Value 2 to 6 0 to VCC 0 to VCC -55 to 125 0 to 1000 0 to 500 0 to 400 Unit V V V C ns ns ns
DC SPECIFICATIONS
Test Condition Symbol Parameter VCC (V) 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 4.5 6.0 VOL Low Level Output Voltage 2.0 4.5 6.0 4.5 6.0 II IOZ Input Leakage Current High Impedance Output Leakage Current Quiescent Supply Current 6.0 6.0 6.0 IO=-20 A IO=-20 A IO=-20 A IO=-6.0 mA IO=-7.8 mA IO=20 A IO=20 A IO=20 A IO=6.0 mA IO=7.8 mA VI = VCC or GND VI = VIH or VIL VO = VCC or GND VI = VCC or GND TA = 25C Min. 1.5 3.15 4.2 0.5 1.35 1.8 1.9 4.4 5.9 4.18 5.68 2.0 4.5 6.0 4.31 5.8 0.0 0.0 0.0 0.17 0.18 0.1 0.1 0.1 0.26 0.26 0.1 0.5 4 1.9 4.4 5.9 4.13 5.63 0.1 0.1 0.1 0.33 0.33 1 5 40 Typ. Max. Value -40 to 85C Min. 1.5 3.15 4.2 0.5 1.35 1.8 1.9 4.4 5.9 4.10 5.60 0.1 0.1 0.1 0.40 0.40 1 10 80 A A A V V Max. -55 to 125C Min. 1.5 3.15 4.2 0.5 1.35 1.8 Max. V Unit
VIH
High Level Input Voltage Low Level Input Voltage High Level Output Voltage
VIL
V
VOH
ICC
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M54HC125
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 6ns)
Test Condition Symbol Parameter VCC (V) 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 2.0 4.5 6.0 CL (pF) TA = 25C Min. Typ. 20 6 5 36 9 8 52 13 11 36 9 8 52 13 11 48 12 10 Max. 60 12 10 75 15 13 105 21 18 75 15 13 105 21 18 80 16 14 Value -40 to 85C Min. Max. 75 15 13 95 19 16 130 26 22 95 19 16 130 26 22 100 20 17 -55 to 125C Min. Max. 90 18 15 110 22 19 160 32 27 110 22 19 160 32 27 120 24 20 ns Unit
tTLH tTHL Output Transition Time tPLH tPHL Propagation Delay Time
50
50
ns
150
ns
tPZL tPZH High Impedance Output Enable Time
50
RL = 1 K
ns
150
RL = 1 K
ns
tPLZ tPHZ High Impedance Output Disable Time
50
RL = 1 K
ns
CAPACITIVE CHARACTERISTICS
Test Condition Symbol Parameter VCC (V) 5.0 5.0 TA = 25C Min. Typ. 5 35 Max. 10 Value -40 to 85C Min. Max. 10 -55 to 125C Min. Max. 10 pF pF Unit
CIN CPD
Input Capacitance Power Dissipation Capacitance (note 1)
1) CPD is defined as the value of the IC's internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/4 (per buffer)
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M54HC125
TEST CIRCUIT
TEST tPLH, tPHL tPZL, tPLZ tPZH, tPHZ
CL = 50pF/150pF or equivalent (includes jig and probe capacitance) R1 = 1K or equivalent RT = ZOUT of pulse generator (typically 50))
SWITCH Open VCC GND
WAVEFORM 1: PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)
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M54HC125
WAVEFORM 2: OUTPUT ENABLE AND DISABLE TIMES (f=1MHz; 50% duty cycle)
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M54HC125
DILC-14 MECHANICAL DATA
mm. DIM. MIN. A a1 a2 B b b1 D e e1 e2 e3 F I K L 10.90 1.14 1.27 15.11 7.62 7.11 2.1 3.00 0.63 1.82 0.40 0.20 18.79 7.36 0.88 2.03 0.45 0.254 19.00 7.62 2.54 15.24 7.87 15.37 8.12 7.75 3.70 12.1 1.5 0.429 0.045 0.050 0.595 0.300 0.280 TYP MAX. 22.54 3.70 1.14 2.39 0.50 0.30 19.20 7.87 MIN. 0.083 0.118 0.025 0.072 0.016 0.008 0.740 0.290 0.035 0.080 0.018 0.010 0.748 0.300 0.100 0.600 0.310 0.605 0.320 0.305 0.146 0.476 0.059 TYP. MAX. 0.100 0.146 0.045 0.094 0.020 0.012 0.756 0.310 inch
0016173H
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M54HC125
FPC-14 MECHANICAL DATA
mm. DIM. MIN. A B C D E F G H L M N 18.75 0.38 4.31 0.38 6.75 9.76 1.49 0.10 7.50 0.127 7.62 1.27 0.43 6.0 22.0 0.738 0.015 0.170 0.48 0.015 TYP 6.91 9.95 MAX. 7.06 10.14 1.95 0.15 7.75 MIN. 0.266 0.384 0.059 0.004 0.295 0.005 0.300 0.050 0.017 0.236 0.866 0.019 TYP. 0.272 0.392 MAX. 0.278 0.399 0.077 0.006 0.305 inch
F
G
D
H
14
8
A
N
L
1
7
H
E
B
M
C
016029E
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M54HC125
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